Filled skutterudites are promising mid-temperature thermoelectric materials for heat-to electricity conversion with relatively high ZT values (n-type-1. 7, p-type -1. l ). However, the heat-to-electricity conversion efficiency of a thermoelectric device depends on not only the ZT value of thermoelectric materials but also the quality of the electrical contacts. A good electrical contact/diffusion barrier should have a similar thermal expansion coefficient (CTE) as the thermoelectric material. At the same time, this electrode/barrier material should have high thermal and electrical conductivity to reduce parasitic electrical/thermal resistance. A new method of thermoelectric skutterudite leg fabrication is disclosed. In this work, a Ni-doped CoSi2 material and a series of FeNi based alloys were developed as electrode as well as diffusion barrier for n-type and p-type skutterudite, respectively. With this new technique, a crack free electrode layer as thin as 0.5mm can be easily prepared for filled skutterudite legs. The contact resistance between skutterudite and electrode layer is lower than 6 μO·cm2 .