Amplification of latent patterns written by nanopantography was demonstrated using chlorine plasma etching. The native oxide on silicon served as a hard mask, due to the high selectivity of chlorine plasma etching with sub-threshold ion bombardment energies. High aspect ratio (>6) nanopatterns were fabricated in silicon with no mask undercut. "UH" logos with -10 nm-wide nanoletters were developed to demonstrate the ability the proposed technique to fabricate a plurality of patterns using nanopantography followed by highly selective plasma etching.