A cutting-edge semiconductor device and method that utilizes epitaxially grown silicon on a flexible substrate. This technology improves poor mobility in amorphous silicon flexible semiconductors and allows for fast switching and high current in thin film transistors (TFTs), which are ideal qualities for high performance flexible electronic devices. For this device, a biaxially-textured layer is grown using ion beam assisted deposition (IBAD) on a flexible substrate. Upon the biaxially-textured layer, a germanium layer is grown. A silicon layer is grown on the germanium layer using plasma enhanced chemical vapor deposition (PECVD). The multilayered structure of this semiconductor device allows for the silicon layer to be a single-crystal-like thin film, which contributes to the high performance of this technology.