A hybrid chemical and physical vapor deposition (HybCPVD) or hybrid vapor phase epitaxy (HybVPE) as a new epitaxial thin film growth and deposition technique is invented to achieve transition-metal-alloyed III-N piezoelectric semiconductor thin films consisting of group IIIb (or group 3) transition-metal-nitride, such as scandium nitride (ScN) and yttrium nitride (YN), and group IIIa-nitride (or group 13, boron group), such as boron nitride (BN), aluminum nitride (AlN), gallium nitride (GaN), and indium nitride (InN). The new technique employ various forms of precursors including vapor phase of pure transition metal, vapor phase chloride form of group III element, and ammonia. The alloys include the various combinations of group IIIb-nitrides and group IIIa-nitrides such as ScxAl1-xN, ScxB1-xN, ScxGa1-xN, YxAl1-xN, YxB1-xN, YxGa1-xN, etc.